Many technologies have sought to displace DRAM as the industry’s low-cost RAM solution, yet they have failed because they cannot credibly replace DRAM. Some required exotic new materials that were ...

Smallest silicon dynamic memory devices ever reported Largest programming window, significantly improved retention time demonstrated 2008 IEEE INTERNATIONAL SOI CONFERENCE, New Paltz, N.Y. — October ...

Z-RAM Gen2, the second generation of Z-RAM high-density memory intellectual property (IP), boosts performance while reducing power consumption, claims developer Innovative Silicon (ISi). Already, ...

``Outstanding'' Results Demonstrated on 90nm Processes Z-RAM Proven Far More Resistant to Soft Errors Than SRAM Technologies SANTA CLARA, Calif.--Jan. 23, 2006--Innovative Silicon Inc. (ISi), the ...

I have argued in the past that attempting to replace DRAMs is probably not the ideal market entry point for new memory technologies. However, the July issue of IEEE Spectrum discusses a possible ...

SANTA CLARA, USA & ICHEON, KOREA: Innovative Silicon Inc. (ISi), the developer of Z-RAM high-density memory intellectual property (IP), and Hynix Semiconductor Inc. announced that Hynix has agreed to ...

Hynix is shaking things up in the memory market with its decision to license Innovative Silicon's Z-RAM technology. The two companies jointly announced the agreement on Monday. Z-RAM is a twist on the ...

Innovative Silicon (ISi) is a venture-funded start-up company, founded by chief scientist Serguei Okhonin and chairman and CTO Pierre Fazan, dedicated to the development and licensing of Z-RAM memory ...

LONDON — Serguei Okhonin, co-founder and chief scientist at Innovative Silicon Inc. (Santa Clara, Calif. and Lausanne, Switzerland) spoke at the International Electron Devices Meeting discussing ...

Innovative Silicon (ISi) is a venture-funded start-up company, founded by chief scientist Serguei Okhonin and chairman and CTO Pierre Fazan, and dedicated to the development and licensing of Z-RAM ...